Blar i SINTEF Open på forfatter "Malik, Nishant"

Viser treff 1-11 av 11

    • Al-Al thermocompression bonding for wafer-level MEMS sealing 

      Malik, Nishant; Schjølberg-Henriksen, Kari; Poppe, Erik; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2014)
      Al–Al thermocompression bonding has been studied using test structures relevant for wafer level sealing of MEMS devices. Si wafers with protruding frame structures were bonded to planar Si wafers, both covered with a ...

    • Al-Al Wafer-Level Thermocompression Bonding applied for MEMS 

      Taklo, Maaike M. Visser; Schjølberg-Henriksen, Kari; Malik, Nishant; Poppe, Erik Utne; Moe, Sigurd T.; Finstad, Terje (Chapter, 2017)
      Wafer-level thermocompression bonding (TCB) using aluminum (Al) is presented as a hermetic sealing method for MEMS. The process is a CMOS compatible alternative to TCB using metals like gold (Au) and copper (Cu), which are ...

    • Characterization of interfacial morphology of low temperature, low pressure Au–Au thermocompression bonding 

      Goorsky, Mark S.; Schjølberg-Henriksen, Kari; Beekley, Brett; Bai, Tingyu; Mani, Karthick; Ambhore, Pranav; Bajwa, Adeel; Malik, Nishant; Iyer, Subramanian S. (Journal article; Peer reviewed, 2017)
      Au-Au thermocompression bonding is a versatile technique of high interest for a variety of applications. We have investigated Au-Au bonding using sputter deposited Au films under conditions of low temperature (150-250 °C) ...

    • Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints 

      Schjølberg-Henriksen, Kari; Malik, Nishant; Gundersen, Elin Vold; Christiansen, Oscar Rincon; Imenes, Kristin; Fournel, Frank; Moe, Sigurd T. (Journal article; Peer reviewed, 2015)
      The electrical, mechanical, and hermeticity properties of low-temperature, plasma activated direct silicon bonds were investigated. On individual dies with a bonding area ranging from 1–4 mm2, the bonded interface was found ...

    • Environmental Stress Testing of Wafer-Level Al-Al Thermocompression Bonds: Strength and Hermeticity 

      Malik, Nishant; Poppe, Erik; Schjølberg-Henriksen, Kari; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2015)
      Hermeticity, reliability and strength of Al-Al thermocompression bonds realized by applying different bonding parameters have been investigated. Laminates of diameter 150 mm were realized by bonding wafers containing ...

    • Environmental Stress Testing of Wafer-Level Au-Au Thermocompression Bonds Realized at Low Temperature: Strength and Hermeticity 

      Malik, Nishant; Tofteberg, Hannah Rosquist; Poppe, Erik; Finstad, Terje; Schjølberg-Henriksen, Kari (Journal article; Peer reviewed, 2015)
      Hermeticity, reliability and strength of four laminates bonded at different temperatures by Au-Au thermocompression bonding have been investigated. Laminates with a diameter of 150 mm were realized by bonding a wafer ...

    • Impact of SiO2 on Al–Al thermocompression wafer bonding 

      Malik, Nishant; Schjølberg-Henriksen, Kari; Poppe, Erik; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2015)
      Al–Al thermocompression bonding suitable for wafer level sealing of MEMS devices has been investigated. This paper presents a comparison of thermocompression bonding of Al films deposited on Si with and without a thermal ...

    • Interfacial characterization of Al-Al thermocompression bonds 

      Malik, Nishant; Carvalho, Patricia; Poppe, Erik; Finstad, Terje (Journal article; Peer reviewed, 2016)
      Interfaces formed by Al-Al thermocompression bonding were studied by the transmission electron microscopy. Si wafer pairs having patterned bonding frames were bonded using Al films deposited on Si or SiO2 as intermediate ...

    • Low-Temperature Aluminum-Aluminum Wafer Bonding 

      Rebhan, Bernhard; Hinterreiter, Andreas; Malik, Nishant; Schjølberg-Henriksen, Kari; Dragoi, Viorel; Hingerl, Kurt (Journal article; Peer reviewed, 2016)
      Aluminum-aluminum thermo-compression wafer bonding is becoming increasingly important in the production of microelectromechanical systems (MEMS) devices. As the chemically highly stable aluminum oxide layer acts as a ...

    • Texture of Al films for wafer-level thermocompression bonding 

      Malik, Nishant; Venkatachalapathy, Vishnukanthan; Dall, Wilhelm; Schjølberg-Henriksen, Kari; Poppe, Erik Utne; Taklo, Maaike M. Visser; Finstad, Terje (Journal article; Peer reviewed, 2017)
      Properties of aluminum thin films for thermocompression bonding have been studied in terms of surface roughness, grain size, and grain orientation by AFM, SEM, XRD and EBSD for thermocompression bonding. Al films were ...

    • The Synergistic Roles of Temperature and Pressure in Thermo-Compression Bonding of Au 

      Ambhore, Pranav; Mani, Karthick; Beekley, Brett; Malik, Nishant; Schjølberg-Henriksen, Kari; Iyer, Subramanian S.; Goorsky, Mark S. (Peer reviewed; Journal article, 2018)
      Abstract Au-Au thermocompression bonding is a widely used technique for a variety of applications including hermetic sealing and packaging at a fine pitch. We have investigated the roles of pressure and temperature ...